Danish nanowire breakthrough could revolutionise nanoelectronics  

2009.11.10
A new method of making nanowires could have major implications for the future of both nanoelectronics and high efficiency solar cells
A new method of manufacturing nanowires that has been developed at the Niels Bohr Institute in Denmark could have major implications for the future development of both nanoelectronics and high efficiency solar cells, reports Videnskab.dk
 
The new method has been developed at the Nano-Science Center of the Niels Bohr Institute, which is part of Copenhagen University. In essence, the technique allows two different semiconductor materials, gallium arsenide (GaAs) and indium arsenide (InAs) to be arranged in a nanowire so that there is no soft transition between the two materials, but an extremely sharp divide. This results in a much better current through the semiconductors, and also high efficiency.
 
The relevance to solar cells is that while both GaAs and InAs absorb solar radiation, they absorb in different parts of the solar spectrum. So by putting them together in the way that has been achieved in Denmark, the amount of solar radiation capture can significantly increased. This in turn opens up the possibility of their use to create new, high efficiency solar cells.
 
The new method promises to be a useful technological tool for the Danish solar cell development firm Sunflake A/S, which just this week has begun a collaboration with the High Technology Fund. Sunflake uses nanowires to develop solar cell prototypes, and the new method will add a further dimension of interest to its research.
 
Link > Nano-Science Center                        

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